Part IMBG65R015M2H
Description 600V G2 MOSFET
Category MOSFET
Manufacturer Infineon
Size 1.64 MB
Infineon
IMBG65R015M2H

Overview

  • Ultra-lowswitchinglosses
  • Benchmarkgatethresholdvoltage,VGS(th)=4.5V
  • Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
  • Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
  • Robustbodydiodeoperationunderhardcommutationevents
  • .XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
  • Enableshighefficiencyandhighpowerdensitydesigns
  • Facilitatesgreateaseofuseandintegration
  • ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
  • Reducesthesize,weightandbillofmaterialsofthesystems