Datasheet Summary
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IMT65R010M2H Final datasheet
SiC MOSFET
CoolSiC™ MOSFET 650 V G2
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Features
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
- Flexible driving voltage and patible with bipolar driving scheme
- Robust body diode operation under hard mutation events
- .XT interconnection...