IMT65R015M2H Description
3 Thermal characteristics.
IMT65R015M2H Key Features
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5 V
- Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
- Flexible driving voltage and patible with bipolar driving scheme
- Robust body diode operation under hard mutation events
- XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
- Facilitates great ease of use and integration
- Provides the best price performance ratio pared to Industry’s most
- Reduces the size, weight and bill of materials of the systems