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IMW120R090M1H - Silicon Carbide MOSFET

Features

  • Very low switching losses Gate pin 1.
  • Threshold-free on state characteristic.
  • Wide gate-source voltage range.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • 0V turn-off gate voltage for easy and simple gate drive.
  • Fully controllable dV/dt.
  • Robust body diode for hard commutation.
  • Temperature independent turn-off switching losses Benefits.
  • Efficiency improvement.
  • Enabling higher frequency.
  • Increased power density.
  • Cooling ef.

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Datasheet Details

Part number IMW120R090M1H
Manufacturer Infineon
File Size 1.15 MB
Description Silicon Carbide MOSFET
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IMW120R090M1H IMW120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses Gate pin 1  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.
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