Part IMW120R090M1H
Description Silicon Carbide MOSFET
Category MOSFET
Manufacturer Infineon
Size 1.15 MB
Infineon
IMW120R090M1H

Overview

  • Very low switching losses Gate pin 1
  • Threshold-free on state characteristic
  • Wide gate-source voltage range
  • Benchmark gate threshold voltage, VGS(th) = 4.5V
  • 0V turn-off gate voltage for easy and simple gate drive
  • Fully controllable dV/dt
  • Robust body diode for hard commutation
  • Temperature independent turn-off switching losses Benefits
  • Efficiency improvement
  • Enabling higher frequency