Part IMZ120R045M1
Description 1200V SiC Trench MOSFET
Category MOSFET
Manufacturer Infineon
Size 1.45 MB
Infineon
IMZ120R045M1

Overview

  • Very low switching losses
  • Threshold-free on state characteristic
  • Wide gate-source voltage range
  • Benchmark gate threshold voltage, VGS(th) = 4.5V
  • 0V turn-off gate voltage
  • Fully controllable dv/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Easy to use/drive due to sense (driver) source pin for better control of the gate
  • Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits
  • Efficiency improvement