IMZA120R017M2H Overview
Key Specifications
Description
1 – drain 2 – source 3 – Kelvin sense contact 4 – gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R017M2H Package PG-TO247-4-U02 Marking 12M2H017 Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-25 IMZA120R017M2H CoolSiC™ 1200 V SiC MOSFET G2 Description.
Key Features
- VDSS = 1200 V at Tvj = 25°C
- IDDC = 69 A at TC = 100°C
- RDS(on) = 17 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
