IPA086N10N3 - MOSFET

This page provides the datasheet information for the IPA086N10N3, a member of the IPA086N10N3G MOSFET family.

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPA086N10N3
Manufacturer	Infineon
File Size	523.96 KB
Description	MOSFET
Datasheet	IPA086N10N3 Datasheet
Additional preview pages of the IPA086N10N3 datasheet.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.4 Final PowerManagement&Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 • Fully isolated package (2500 VAC; 1 minute) Type IPA086N10N3 G 100 V 8.

Published: Oct 28, 2020 |