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IPA086N10N3 Datasheet MOSFET

Manufacturer: Infineon

Download the IPA086N10N3 datasheet PDF. This datasheet also includes the IPA086N10N3G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IPA086N10N3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

Overview

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,100V OptiMOS™3Power-Transistor IPA086N10N3G DataSheet Rev.2.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IPA086N10N3 N-Channel MOSFET INCHANGE
Infineon Technologies Logo IPA086N10N3G MOSFET Infineon Technologies

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