IPA180N10N3 Description
IPA180N10N3 G OptiMOSTM3 Power-Transistor.
IPA180N10N3 Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- 55 ... 175
- case R thJC
- V DS=100 V, V GS=0 V, T j=125 °C