The IPA180N10N3 is a N-Channel MOSFET.
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IPA180N10N3 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPA180N10N3,IIPA180N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤18mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-.
*Low drain-source on-resistance: RDS(on) ≤18mΩ (max) *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *It is intended for general purpose switching applications *ABSOLUTE MAXIMUM RATINGS(T. |
| Part Number | IPA180N10N3 Datasheet |
|---|---|
| Description | Power-Transistor |
| Manufacturer | Infineon |
| Overview |
IPA180N10N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• .
* N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID * 175 °C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application * Ideal for high-frequency. |
| Seller | Inventory | Price Breaks | Buy |
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| Rochester Electronics | 5369 | 100+ : 0.8824 USD 500+ : 0.7942 USD 1000+ : 0.7324 USD 10000+ : 0.653 USD |
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| Microchip USA | 2714 | 300+ : 7.106 USD 1000+ : 7.084 USD 10000+ : 7.062 USD |
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| Microchip USA | 262 | 600+ : 17.0831028 USD 1000+ : 16.9593122 USD 10000+ : 4.4298 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPA180N10N3G | Infineon | Power-Transistor |