IPA65R190C7
Overview
- IncreasedMOSFETdv/dtruggedness
- BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
- BestinclassRDS(on)/package
- Easytouse/drive
- Pb-freeplating,halogenfreemoldcompound Benefits
- Enablinghighersystemefficiency
- Enablinghigherfrequency/increasedpowerdensitysolutions
- Systemcost/sizesavingsduetoreducedcoolingrequirements
- Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max RDS(on),max ID,pulse Eoss@400V
