Infineon Technologies IPB009N03LG
30V MOSFET
| Part No. | IPB009N03LG |
|---|---|
| Datasheet | IPB009N03LG Download |
| Manufacturer |  Infineon Technologies |
| Description | 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● MOSFET for ORing and Uninterruptible Power Supply● Qualified according to JEDEC1) for target applications
● N-channel
● Logic level
● Ultra-low on-resistance RDS(on)
● 100% Avalanche tested
● Pb-free plating; RoHS compliant Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 0.95 mΩ ID 180 A D²-PAK 7pin tab 1 7 Drain Pin 4, tab Gate Pin 1 Source Pin 2,3,5,6,7 Type / Ordering Code IPB009N03L G Package PG-TO263-7 Marking 009N03L Related Links - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.0, 2016-04-21 OptiMOSª3 Power-Transistor, 30 V IPB009N03L G 1 Maximum ratings at TA=25 °C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Continuous drain current ID Pulsed drain current1) Avalanche current, single pulse2) Avalanche energy, single pulse Reverse diode dv/dt Gate source voltage Power dissipation Operating and storage temperature ID,pulse IAS EAS dv/dt VGS Ptot Tj, Tstg Min. - - -20 - -55 Values Typ. Max. - 180 - 180 - 180 - 180...
