IPB025N08N3 - MOSFET

This page provides the datasheet information for the IPB025N08N3, a member of the IPB025N08N3G MOSFET family.

Datasheet Summary

Description

Features

N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB025N08N3
Manufacturer	Infineon
File Size	923.91 KB
Description	MOSFET
Datasheet	IPB025N08N3 Datasheet
Additional preview pages of the IPB025N08N3 datasheet.

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Full PDF Text Transcription

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IPB025N08N3G MOSFET OptiMOSª3Power-Transistor,80V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 2.5 mΩ ID 120 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB025N08N3 G Package PG-TO 263 Marking 025N08N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 2016-03-31 OptiMOSª3Power-Transistor,80V IPB025N08N3G TableofContents Description . . . . .

Published: Oct 2, 2020 |