IPB025N08N3
Description
Sheet 2 2016-03-31 OptiMOSª3Power-Transistor,80V IPB025N08N3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current1) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. 120 - 120 - 480 - 1430 - 20 - 300 - 175 Unit Note/TestCondition A TC=25°C1) TC=100°C A TC=25°C mJ ID=100A,RGS=25Ω V- W TC=25°C °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case RthJC - ambient, minimal footprint RthJA - ambient, 6 cm2 cooling area2) RthJA Min.
Key Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHScompliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
