Datasheet Summary
MOSFET
OptiMOSª3Power-Transistor,80V
Features
- N-channel,normallevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;RoHSpliant
- QualifiedaccordingtoJEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
RDS(on),max
2.5 mΩ
ID 120 A
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB025N08N3 G
Package PG-TO 263
Marking 025N08N
RelatedLinks
- 1) J-STD20 and JESD22 Final Data...