IPB025N10N3G - MOSFET

Datasheet Summary

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Extremely low on-resistance R DS(on).
High current capability.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	IPB025N10N3G
Manufacturer	Infineon
File Size	258.07 KB
Description	MOSFET
Datasheet	IPB025N10N3G Datasheet
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Full PDF Text Transcription

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OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Extremely low on-resistance R DS(on) • High current capability • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type IPB025N10N3 G IPB025N10N3 G Product Summary V DS R DS(on),max ID 100 V 2.

Published: Dec 20, 2016 |