IPB048N15N5LF
Description
Sheet 2 Rev.2.0,2017-03-29 OptiMOSTM5LinearFET,150V IPB048N15N5LF 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. 120 - 115 - 18 - 480 - 30 - 20 - 313 - 150 Unit Note/TestCondition VGS=10V,TC=25°C A VGS=10V,TC=100°C VGS=10V,TC=25°C,RthJA=40K/W1) A TC=25°C mJ ID=40A,RGS=25Ω V- W TC=25°C °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol - case Device on PCB, minimal footprint Device on PCB, 6 cm² cooling area1) RthJC RthJA RthJA Min.
Key Features
- Idealforhot-swapande-fuseapplications
- Verylowon-resistanceRDS(on)
- WidesafeoperatingareaSOA
- N-channel,normallevel
- 100%avalanchetested
- Pb-freeplating;RoHScompliant
- QualifiedaccordingtoJEDEC1)fortargetapplications
