IPB048N15N5 - MOSFET

Datasheet Summary

Description

Features

Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPB048N15N5
Manufacturer	Infineon
File Size	0.96 MB
Description	MOSFET
Datasheet	IPB048N15N5 Datasheet
Additional preview pages of the IPB048N15N5 datasheet.

📁 Similar Datasheet

IPB048N15N5 - N-Channel MOSFET (INCHANGE)
IPB048N15N5LF - N-Channel MOSFET (INCHANGE)
IPB048N06L - Power-Transistor (Infineon Technologies)
IPB048N06LG - Power-Transistor (Infineon Technologies)
IPB041N04N - N-Channel MOSFET (INCHANGE)
IPB041N04NG - Power-Transistor (Infineon Technologies)
IPB042N03LG - Power-Transistor (Infineon Technologies)
IPB042N10N3G - 100V MOSFET (Infineon Technologies)
IPB042N10N3G - N-Channel MOSFET (INCHANGE)
IPB049N06L3 - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPB048N15N5LF - MOSFET
IPB040N08NF2S - MOSFET
IPB041N04N - Power Transistor
IPB042N03L - Power-Transistor
IPB042N10N3 - 100V MOSFET
IPB043N10NF2S - MOSFET
IPB044N15N5 - MOSFET
IPB049N06L3 - Power-Transistor

Full PDF Text Transcription

Click to expand full text

IPB048N15N5 MOSFET OptiMOSª5Power-Transistor,150V Features •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max(TO263) 4.8 mΩ ID 120 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB048N15N5 Package PG-TO 263 Marking 048N15N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-02-05 OptiMOSª5Power-Transistor,150V IPB048N15N5 TableofContents Description . . . . . . . . . . . .

Published: Dec 15, 2016 |