IPB073N15N5
Features
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- Verylowreverserecoverycharge(Qrr)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max(TO263)
7.3 mΩ
ID 114 A
Qrr 96 n C
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB073N15N5
Package PG-TO 263
Marking 073N15N5
Related Links
- 1) J-STD20 and JESD22 Final Data Sheet
Rev.2.0,2016-03-17
Opti MOSª5Power-Transistor,150V
Tableof Contents
Description
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