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IPB100P03P3L-04 - Power-Transistor

Key Features

  • P-channel - Logic Level - Enhancement mode R DS(on),max (SMD version) 4 mΩ.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1.
  • Green package (RoHS Compliant).
  • Ultra low Rds(on).
  • 100% Avalanche tested.
  • Intended for reverse battery protection Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04 Package PG-TO263-3-2 PG-TO262-3-1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS®-P Trench Power-Transistor IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary V DS -30 V Features • P-channel - Logic Level - Enhancement mode R DS(on),max (SMD version) 4 mΩ • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature I D -100 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • Green package (RoHS Compliant) • Ultra low Rds(on) • 100% Avalanche tested • Intended for reverse battery protection Type IPB100P03P3L-04 IPI100P03P3L-04 IPP100P03P3L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3P03L04 3P03L04 3P03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current2) ID T C=25°C, V GS=-10V I D,pulse T C=100°C, V GS=-