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IPB17N25S3-100 - Power MOSFET

Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB17N25S3-100 IPP17N25S3-100 Product Summary VDS RDS(on),max ID 250 V 100 mΩ 17 A PG-TO263-3-2 PG-TO220-3-1 Type IPB17N25S3-100 IPP17N25S3-100 Package PG-TO263-3-2 PG-TO220-3-1 Marking 3N25100 3N25100 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuo.

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Datasheet Details

Part number IPB17N25S3-100
Manufacturer Infineon
File Size 202.58 KB
Description Power MOSFET
Datasheet download datasheet IPB17N25S3-100 Datasheet
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Full PDF Text Transcription

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB17N25S3-100 IPP17N25S3-100 Product Summary VDS RDS(on),max ID 250 V 100 mΩ 17 A PG-TO263-3-2 PG-TO220-3-1 Type IPB17N25S3-100 IPP17N25S3-100 Package PG-TO263-3-2 PG-TO220-3-1 Marking 3N25100 3N25100 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) I D,pulse E AS T C=25°C I D=5.
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