IPB17N25S3-100 Description
OptiMOS™-T Power-Transistor.
IPB17N25S3-100 Key Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
- Reverse diode dv /dt
- Gate source voltage Power dissipation Operating and storage temperature
- P tot T C=25°C