IPB180N04S4L-H0
IPB180N04S4L-H0 is Power-Transistor manufactured by Infineon.
Features
- N-channel Logic Level
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (Ro HS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on) ID
40 V 1.0 mΩ 180 A
PG-TO263-7-3
Type IPB180N04S4L-H0
Package PG-TO263-7-3
Marking 4N04LH0
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A
Avalanche current, single pulse
I AS
- Gate source voltage
V GS
- Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- -
Value 180
720 850 180 +20/-16 250 -55 ... +175 55/175/56
Unit A m J A V W °C
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