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IPB180N04S4L-H0 - Power-Transistor

Datasheet Summary

Features

  • N-channel Logic Level - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green product (RoHS compliant).
  • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.0 mΩ 180 A PG-TO263-7-3 Type IPB180N04S4L-H0 Package PG-TO263-7-3 Marking 4N04LH0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=10.

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Datasheet Details

Part number IPB180N04S4L-H0
Manufacturer Infineon
File Size 209.19 KB
Description Power-Transistor
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Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.
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