IPB65R110CFD7 Datasheet | Infineon

MOSFET 650VCool MOSªCFD7SJPower Device Thelatest650VCool MOS™CFD7extendsthevoltageclassofferingof the CFD7familyandisasuccessortothe650VCool MOS™CFD2. Resultingfromimprovedswitchingperformanceandexcellentthermal behavior,650VCoo MOS™CFD7offershighestefficiencyinresonant switchingtopologies,suchas LLCandphase-shift-full-bridge(ZVS).As partof Infineon’sfastbodydiodeportfolio,thisnewproductseriesblends alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard mutationrobustness.The Cool MOS™CFD7technologymeets highestefficiencyandreliabilitystandardsandfurthermoresupportshigh powerdensitysolutions. Features - Ultra-fastbodydiode - 650Vbreakdownvoltage - Best-in-class RDS(on) - Reducedswitchinglosses - Low RDS(on)dependencyovertemperature Benefits - Excellenthardmutationruggedness - Extrasafetymarginfordesignswithincreasedbusvoltage - Enablingincreasedpowerdensitysolutions - Outstandinglightloadefficiencyinindustrial SMPSapplications - Improvedfullloadefficiencyinindustrial SMPSapplications - Pricepetitivenessoverprevious Cool MOS™families Potentialapplications Suitablefor Soft Switchingtopologies Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications- Server, Tele,EVCharging,Solar Productvalidation Fullyqualifiedaccordingto JEDECfor Industrial Applications Pleasenote:For MOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyremended. Table1Key Performance Parameters Parameter Value Unit VDS @ Tj,max RDS(on),max 110 mΩ Qg,typ 41 n...