IPB80N03S4L-03 Datasheet | Infineon

Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N03L03 4N03L04 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C I D=80 A T C=25 °C T C=25 °C Value 80 80 320 95 80 ±16 94 -55 ... +175 55/175/56 m J A V W °C Unit A Rev. 2.1 page 1 2010-03-08 Free Datasheet http://../ IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R th JC R th JA R th JA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 m A V GS(th) I DSS V DS=V GS, I D=45 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.5 V, I D=40 A V GS=4.5 V, I D=40 A, SMD version V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 30 1.0 1.6 0.01 2.2 1 µA V 1.6 62 62 40 K/W Values typ. max. Unit - 10 - 5 1 3.9 3.6 3.0 2.7 60 100 5 4.7 3.7 3.4 n A mΩ Rev. 2.1 page 2 2010-03-08 Free Datasheet http://../ IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 Parameter Symbol...