IPB80N04S4-03
IPB80N04S4-03 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- AEC qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (Ro HS pliant)
- 100% Avalanche tested
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03
Product Summary V DS R DS(on),max (SMD version) ID
40 V 3.3 mΩ 80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB80N04S4-03 IPI80N04S4-03 IPP80N04S4-03
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0403 4N0403 4N0403
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=40A
Avalanche current, single pulse I AS
- Gate source voltage
V GS
- Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
- IEC climatic category; DIN IEC 68-1
- -
Value 80
320 200 80 ±20 94 -55 ... +175 55/175/56
Unit A m J A V W °C
Rev. 1.0 page 1
2010-04-13
IPB80N04S4-03 IPI80N04S4-03,...
