IPC022N03L3 Description
product) 2)typicalbaredieRDS(on);VGS=10Vwhenusedwith1x400µmAl-bondwire 3) limited by wafer test-equipment 4) Wafer tested. Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With...