IPC028N03L3 - MOSFET

Infineon

General Description

N-channel enhancement mode For dynamic characterization refer to the datasheet of IPD060N03L G AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glue

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Datasheet Details

Part number	IPC028N03L3
Manufacturer	Infineon
File Size	1.46 MB
Description	MOSFET
Datasheet	IPC028N03L3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC028N03L3 DataSheet Rev.2.5 Final Industrial&Multimarket OptiMOS™3PowerMOSTransistorChip IPC028N03L3 1Description •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD060N03LG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride+imide PowerMOSTransistorChip Table1KeyPerformanceParameters Parameter Value Unit V(BR)DSS RDS(on) Die size 30 6.01) 2.26 x 1.