Datasheet Summary
IPD090N03LGE8177
MOSFET
OptiMOSª3Power-Transistor,30V
Features
- FastswitchingMOSFETforSMPS
- OptimizedtechnologyforDC/DCconverters
- QualifiedaccordingtoJEDEC1)fortargetapplications
- N-channel,logiclevel
- ExcellentgatechargexRDS(on)product(FOM)
- Verylowon-resistanceRDS(on)
- Avalancherated
- Pb-freeplating
Table1KeyPerformanceParameters
Parameter
Value
Unit
RDS(on),max
9 mΩ
DPAK tab
2 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPD090N03L G E8177
Package PG-TO252-3
Marking 090N03L
RelatedLinks
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.1,2020-09-14...
