IPD090N03L Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤9mΩ
- Enhancement mode
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Fast switching
| Part | IPD090N03L |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 237.97 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD090N03LGE8177 | Infineon | MOSFET |
| IPD090N03LG | Infineon | MOSFET |
| IPD090N03L | Infineon | MOSFET |