IPD090N03L Datasheet and Specifications PDF

The IPD090N03L is a N-Channel MOSFET.

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Part NumberIPD090N03L Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤9mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS.
Part NumberIPD090N03L Datasheet
DescriptionMOSFET
ManufacturerInfineon
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . .
*FastswitchingMOSFETforSMPS
*OptimizedtechnologyforDC/DCconverters
*QualifiedaccordingtoJEDEC1)fortargetapplications
*N-channel,logiclevel
*ExcellentgatechargexRDS(on)product(FOM)
*Verylowon-resistanceRDS(on)
*Avalancherated
*Pb-freeplating Table1KeyPerfor.

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