Datasheet Summary
OptiMOS(TM)3 Power-Transistor
Features
- Ideal for high frequency switching
- Optimized technology for DC/DC converters
- Excellent gate charge x R DS(on) product (FOM)
- N-channel, normal level
- 100% avalanche tested
- Pb-free plating; RoHS pliant
- Qualified according to JEDEC1) for target applications
- Halogen-free according to IEC61249-2-21
Type
IPD096N08N3 G
IPD096N08N3 G
Product Summary VDS RDS(on),max ID
80 V 9.6 mW 73 A
Package Marking
PG-TO252-3 096N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single...
