Datasheet Summary
isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3
- Features
- Static drain-source on-resistance:
RDS(on)≤9.6mΩ
- Enhancement mode:
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- High frequency switching
-...
