The IPD096N08N3 is a Power-Transistor.
| Max Operating Temp | 175 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | IPD096N08N3 Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview |
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100.
* Ideal for high frequency switching * Optimized technology for DC/DC converters * Excellent gate charge x R DS(on) product (FOM) * N-channel, normal level * 100% avalanche tested * Pb-free plating; RoHS compliant * Qualified according to JEDEC1) for target applications * Halogen-free according to I. |
| Part Number | IPD096N08N3 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤9.6mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤9.6mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High frequency switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Volt. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Avnet | 89 | 1+ : 1.95 USD 10+ : 1.25 USD 25+ : 1.11 USD 50+ : 0.971 USD |
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| Avnet | 0 | 2500+ : 0.43053 USD 5000+ : 0.42408 USD 10000+ : 0.41762 USD 20000+ : 0.41116 USD |
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| Newark | 89 | 1+ : 1.95 USD 10+ : 1.24 USD 25+ : 1.1 USD 50+ : 0.967 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IPD096N08N3G | Infineon | Power-Transistor |