• Part: IPD30N03S4L-09
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 171.36 KB
Download IPD30N03S4L-09 Datasheet PDF
Infineon
IPD30N03S4L-09
IPD30N03S4L-09 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic...