IPD30N03S4L-09
IPD30N03S4L-09 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
Type IPD30N03S4L-09
Package PG-TO252-3-11
Marking 4N03L09
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic...