• Part: IPD30N03S4L-14
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 181.89 KB
Download IPD30N03S4L-14 Datasheet PDF
Infineon
IPD30N03S4L-14
IPD30N03S4L-14 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 13.6 30 V mΩ A Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - Ultra low Rds(on) - 100% Avalanche tested PG-TO252-3-11 Type IPD70N03S4L-04 Package PG-TO252-3-11 Marking 4N03L04 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage...