• Part: IPD30N06S4L-23
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 159.82 KB
Download IPD30N06S4L-23 Datasheet PDF
Infineon
IPD30N06S4L-23
IPD30N06S4L-23 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A Features - N-channel - Enhancement mode - AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested Type IPD30N06S4L-23 Package PG-TO252-3-11 Marking 4N06L23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN...