IPD30N06S4L-23
IPD30N06S4L-23 is Power-Transistor manufactured by Infineon.
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max ID 60 23 30 PG-TO252-3-11 V mΩ A
Features
- N-channel
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Type IPD30N06S4L-23
Package PG-TO252-3-11
Marking 4N06L23
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN...