• Part: IPD40N03S4L-08
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 237.96 KB
Download IPD40N03S4L-08 Datasheet PDF
Infineon
IPD40N03S4L-08
IPD40N03S4L-08 is manufactured by Infineon.
OptiMOS®-T2 Power-Transistor Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 30 V 8.3 mW 40 A PG-TO252-3-11 Type IPD40N03S4L-08 Package Marking PG-TO252-3-11 4N03L08 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D=40A Avalanche current, single pulse I AS - Gate source voltage V...