Datasheet4U Logo Datasheet4U.com

IPD49CN10NG - Power Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Datasheet preview – IPD49CN10NG

Datasheet Details

Part number IPD49CN10NG
Manufacturer Infineon
File Size 574.46 KB
Description Power Transistor
Datasheet download datasheet IPD49CN10NG Datasheet
Additional preview pages of the IPD49CN10NG datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Package Marking PG-TO263-3 50CN10N PG-TO252-3 49CN10N PG-TO262-3 50CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energ
Published: |