IPD49CN10NG Datasheet | Infineon

OptiMOS®2 Power-Transistor Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Product Summary V DS R DS(on),max (TO252) ID 100 V 49 mΩ 20 A - 175 °C operating temperature - Pb-free lead plating; RoHS pliant - Qualified according to JEDEC1) for target application - Ideal for high-frequency switching and synchronous rectification Type IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G Package Marking PG-TO263-3 50CN10N PG-TO252-3 49CN10N PG-TO262-3 50CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous...