IPD50N06S3-07
IPD50N06S3-07 is Power Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor
Features
- N-channel
- Normal Level
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (RoHS pliant)
- Ultra low Rds(on)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
55 V 6.9 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S3-07
Package
Marking
PG-TO252-3-11 3N0607
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A,
Avalanche current, single pulse
I...
