• Part: IPD50N06S3L-13
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 153.67 KB
Download IPD50N06S3L-13 Datasheet PDF
Infineon
IPD50N06S3L-13
IPD50N06S3L-13 is Power Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor Features - N-channel - Logic Level - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (RoHS pliant) - 100% Avalanche tested Product Summary V DS R DS(on),max ID 55 V 13 mΩ 50 A PG-TO252-3-11 Type IPD50N06S3L-13 Package Marking PG-TO252-3-11 3N06L13 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse I D,pulse E AS I AS T C=25 °C I D=25 A Gate source...