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OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPD50N06S3L-13
Product Summary V DS R DS(on),max ID
55 V 13 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S3L-13
Package
Marking
PG-TO252-3-11 3N06L13
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse
I D,pulse E AS I AS
T C=25 °C I D=25 A
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC clima
IPD50N06S3L-13 Datasheet
