• Part: IPD50P03P4L-11
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 156.52 KB
Download IPD50P03P4L-11 Datasheet PDF
Infineon
IPD50P03P4L-11
IPD50P03P4L-11 is Power Transistor manufactured by Infineon.
OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -30 V 10.5 mΩ -50 A Features - P-channel - Logic Level - Enhancement mode - AEC qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green Product (RoHS pliant) - 100% Avalanche tested - Intended for reverse battery protection PG-TO252-3-11 Type IPD50P03P4L-11 Package Marking PG-TO252-3-11 4P03L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D= -25A Avalanche current, single...