IPD50P04P4-13 - Power Transistor

Features

P-channel - Normal Level - Enhancement mode.
AEC qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green package (RoHS compliant).
100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 12.6 mW -50 A PG-TO252-3-313 Tab 1 3 Gate pin 1 Source pin 3 Type IPD50P04P4-13 Package Marking PG-TO252-3-313 4P0413 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain.

Infineon

Datasheet Details

Part number	IPD50P04P4-13
Manufacturer	Infineon
File Size	413.41 KB
Description	Power Transistor
Datasheet	IPD50P04P4-13 Datasheet
Additional preview pages of the IPD50P04P4-13 datasheet.

📁 Similar Datasheet

IPD50R1K4CE - N-Channel MOSFET (INCHANGE)
IPD50R280CE - N-Channel MOSFET (INCHANGE)
IPD50R2K0CE - N-Channel MOSFET (INCHANGE)
IPD50R380CE - N-Channel MOSFET (INCHANGE)
IPD50R399CP - N-Channel MOSFET (INCHANGE)
IPD50R3K0CE - N-Channel MOSFET (INCHANGE)
IPD50R500CE - N-Channel MOSFET (INCHANGE)
IPD50R520CP - N-Channel MOSFET (INCHANGE)
IPD50R650CE - N-Channel MOSFET (INCHANGE)
IPD50R800CE - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPD50P04P4L-11 - Power Transistor
IPD50P03P4L-11 - Power Transistor
IPD50CN10NG - Power-Transistor
IPD50N03S2-07 - Power Transistor
IPD50N03S2L-06 - Power Transistor
IPD50N03S4L-06 - Power Transistor
IPD50N04S3-08 - Power Transistor
IPD50N04S3-09 - Power Transistor

Full PDF Text Transcription

Click to expand full text

Type IPD50P04P4-13 OptiMOS®-P2 Power-Transistor Features • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID -40 V 12.

Published: Apr 14, 2015 |