IPD50R399CP - Power Transistor

Features

Lowest figure of merit RON x Qg.
Ultra low gate charge.
Extreme dv/dt rated.
High peak current capability.
Pb-free lead plating; RoHS compliant.
Quailfied according to JEDEC1) for target.

Infineon

Datasheet Details

Part number	IPD50R399CP
Manufacturer	Infineon
File Size	306.06 KB
Description	Power Transistor
Datasheet	IPD50R399CP Datasheet
Additional preview pages of the IPD50R399CP datasheet.

📁 Similar Datasheet

IPD50R399CP - N-Channel MOSFET (INCHANGE)
IPD50R380CE - N-Channel MOSFET (INCHANGE)
IPD50R3K0CE - N-Channel MOSFET (INCHANGE)
IPD50R1K4CE - N-Channel MOSFET (INCHANGE)
IPD50R280CE - N-Channel MOSFET (INCHANGE)
IPD50R2K0CE - N-Channel MOSFET (INCHANGE)
IPD50R500CE - N-Channel MOSFET (INCHANGE)
IPD50R520CP - N-Channel MOSFET (INCHANGE)
IPD50R650CE - N-Channel MOSFET (INCHANGE)
IPD50R800CE - N-Channel MOSFET (INCHANGE)

Other Datasheets by Infineon

IPD50R380CE - Power Transistor
IPD50R3K0CE - MOSFET
IPD50R1K4CE - MOSFET
IPD50R280CE - MOSFET
IPD50R2K0CE - MOSFET
IPD50R500CE - MOSFET
IPD50R520CP - Power Transistor
IPD50R650CE - MOSFET

Full PDF Text Transcription

Click to expand full text

CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied according to JEDEC1) for target applications Product Summary VDS @Tjmax RDS(on),max Qg,typ IPD50R399CP 550 V 0.

Published: Apr 14, 2015 |