IPD50R399CP Datasheet and Specifications PDF

The IPD50R399CP is a Power Transistor.

Key Specifications

PackageTO-252-3
Mount TypeSurface Mount
Pins3
Height2.413 mm
Length6.73 mm
Width6.223 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIPD50R399CP Datasheet
ManufacturerInfineon
Overview CoolMOSTM Power Transistor Features • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant • Quailfied ac.
* Lowest figure of merit RON x Qg
* Ultra low gate charge
* Extreme dv/dt rated
* High peak current capability
* Pb-free lead plating; RoHS compliant
* Quailfied according to JEDEC1) for target applications Product Summary VDS @Tjmax RDS(on),max Qg,typ IPD50R399CP 550 V 0.399  17 nC PG-TO252 Co.
Part NumberIPD50R399CP Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤399mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Static drain-source on-resistance: RDS(on)≤399mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Fast switching
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 .

Price & Availability

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DigiKey 1057 1+ : 2.09 USD
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DigiKey 1057 1+ : 2.09 USD
10+ : 1.334 USD
100+ : 0.903 USD
500+ : 0.71848 USD
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5000+ : 0.55675 USD
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