Infineon Technologies IPD60R650CE
MOSFET
| Part No. | IPD60R650CE |
|---|---|
| Datasheet | IPD60R650CE Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● Extremely low losses due to very low FOM Rdson*Qg and Eoss● Very high commutation ruggedness
● Easy to use/drive
● Pb-free plating, Halogen free mold compound
● Qualified for standard grade applications Gate Pin 1 Source Pin 3
APPLICATIONS
PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV and indoor lighting. Please note: Note1: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Note2: *6R650CE is Full PAK marking only Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 650 mΩ Id. 9.9 A Qg.typ 20.5 nC ID,pulse 19 A Eoss@400V 1.9 µJ Type / Ordering Code IPD60R650CE IPA60R650CE Package PG-TO 252 PG-TO 220 FullPAK Marking Related Links 60S650CE / 6R650CE* see Appendix A Final Data Sheet 1 Rev. 2.3, 2018-04-10 600V CoolMOSª CE Power Transistor IPD60R650CE, IPA60R650CE Table of ContentsDESCRIPTION
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