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IPDQ60R025CFD7 - MOSFET

Datasheet Summary

Description

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Features

  • Ultra-fast body diode.
  • Low gate charge.
  • Best-in-class reverse recovery charge (Qrr).
  • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
  • Lowest FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Best-in-class RDS(on) in SMD and THD packages PG-HDSOP-22 22 12 TAB 1 11 Drain Pin 12-22, Tab Gate Pin 1 Driver Source Pin 2.
  • 1: Internal body diode.
  • 1 Power Source Pin 3-11 Benefits.
  • Excellent hard commutation ruggedness.

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Datasheet Details

Part number IPDQ60R025CFD7
Manufacturer Infineon
File Size 1.22 MB
Description MOSFET
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IPDQ60R025CFD7 MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.
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