IPG20N06S2L-50
IPG20N06S2L-50 is Power Transistor manufactured by Infineon.
OptiMOS® Power-Transistor
Product Summary V DS R DS(on),max4) ID 55 50 20 V mΩ A
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S2L-50
Package PG-TDSON-8-4
Marking 2N06L50
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active2) Symbol ID Conditions T C=25 °C, V GS=10 V1) Value Unit A
T C=100 °C, V GS=10 V Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage...
