IPG20N06S2L-65
IPG20N06S2L-65 is Power Transistor manufactured by Infineon.
®
OptiMOS
Power-Transistor
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested
Product Summary VDS RDS(on),max3) ID
55 V 65 mW 20 A
PG-TDSON-8
Type IPG20N06S2L-65
Package PG-TDSON-8
Marking 2N06L65
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active1)
T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V
Pulsed drain current1) one channel active
Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage
I D,pulse
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