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IPG20N06S3L-35
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ A
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S3L-35
Package PG-TDSON-8-4
Marking 3N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,puls
IPG20N06S3L-35 Datasheet
