IPG20N06S3L-35
IPG20N06S3L-35 is Power Transistor manufactured by Infineon.
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ A
Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S3L-35
Package PG-TDSON-8-4
Marking 3N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power...
