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IPL60R115CFD7 - 600V MOSFET

Datasheet Summary

Description

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Features

  • Ultra-fast body diode.
  • Low gate charge.
  • Best-in-class reverse recovery charge (Qrr).
  • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness.
  • Lowest FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Best-in-class RDS(on) in SMD and THD packages Benefits.
  • Excellent hard commutation ruggedness.
  • Highest reliability for resonant topologies.
  • Highest efficiency with outstanding ease-of-use / performance tradeoff.
  • Enabl.

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Datasheet preview – IPL60R115CFD7

Datasheet Details

Part number IPL60R115CFD7
Manufacturer Infineon
File Size 1.34 MB
Description 600V MOSFET
Datasheet download datasheet IPL60R115CFD7 Datasheet
Additional preview pages of the IPL60R115CFD7 datasheet.

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Full PDF Text Transcription

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IPL60R115CFD7 MOSFET 600VCoolMOSªCFD7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe successortotheCoolMOS™CFD2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™ CFD7offershighestefficiencyinresonanttopologies.
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