IPN60R360PFD7S
Overview
- ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
- LowswitchinglossesEoss,excellentthermalbehavior
- Fastbodydiode
- WiderangeportfolioofRDS(on)andpackagevariations
- Integratedzenerdiode Benefits
- Enableshighpowerdensitydesignsandsmallformfactors
- Enablesefficiencygainsathigherswitchingfrequencies
- Excellentcommutationruggedness
- Easytoselectrightpartsandoptimizethedesign
- HighESDruggedness Potentialapplications RecommendedforZVStopologiesusedinhighdensitychargers, adapters,lightingandmotordrivesapplications,etc. Productvalidation QualifiedaccordingtoJEDECStandard Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 360 mΩ Qg,typ
