IPN60R600P7S - Power-Transistor

Datasheet Summary

Features

Suitable for hard and soft switching (PFC and LLC).
Integrated Gate Resistor to enable excellent balance between efficiency and ease of use.
RDS(on).
A below 1Ohm.
mm², enables low RDSON/package.
ESD diode from 180mOhms and above.
Ser.

Infineon

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Datasheet Details

Part number	IPN60R600P7S
Manufacturer	Infineon
File Size	1.14 MB
Description	Power-Transistor
Datasheet	IPN60R600P7S Datasheet
Additional preview pages of the IPN60R600P7S datasheet.

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Full PDF Text Transcription

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IPN60R600P7S MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriescombinestheexperienceoftheleadingSJMOSFET supplierwithhighclassinnovation,andistheonlyplatformthatenablesan RDS(on)*Abelow1Ohm*mm².The600VCoolMOS™P7seriesisthe successortotheCoolMOS™P6seriesandcontinuestoofferallthe benefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.

Published: Sep 6, 2018 |